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 Reflective Photosensors (Photo Reflectors)
CNB2301
Reflective Photosensor
Overview
CNB2301 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Darlington phototransistor used as the photo detector in a single resin package.
Unit : mm
Mark for indicating anode side C0.5 1 3
9.01.0
2.00.2
Chip center
Features
Ultraminiature : 2.7 x 3.4 mm Visible light cutoff resin is used High current-transfer ratio
9.01.0
2.70.2 0.4
4-0.7 4-0.5 0.1 2 1.8 4
2.00.2
0.5 0.15
Detection of paper, film and cloth Detection of rotary positioning
Detection of position and edge Liquid level sensor
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC VCEO VECO PC*2 Topr 3 50 75 30 20 5 75 -25 to +85 Unit V mA mW mA V V mW C C
*1
Tstg -30 to +100
Input power derating ratio is 1.0 mW/C at Ta 25C. *2 Output power derating ratio is 1.0 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Input Reverse current (DC) characteristics Capacitance between terminals Output characteristics Collector cutoff current Collector current Leakage current Transfer characteristics Response time
*1 I
Symbol VF IR Ct ICEO ID IF = 50mA VR = 3V
Conditions
min
Forward voltage (DC)
VR = 0V, f = 1MHz VCE = 10V 0.46 VCC = 5V, IF = 2mA, RL = 100
IC*1, *2 VCC = 5V, IF = 2mA, RL = 100, d = 1mm tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100
Collector to emitter saturation voltage VCE(sat) IF = 5mA, IC = 0.5mA
C
classifications Class IC (mA) Q 0.46 to 1.75 R 1.3 to 4.95 S 3.15 to 12.0
*2 Output
current measurement method
*3 Time *4 Time
,, ,,
IF IC RL VCC
required for the output current to increase from 10% to 90% of its final value required for the output current to decrease from 90% to 10% of its initial value
, ,,
1 23 4 Pin connection
Applications
1.50.2
3.40.3
typ 1.3 0.01 30
max 1.5 10 1.0 12.0 2.0
Unit V A pF A mA A s V
150 1.5
,, ,,, ,,, ,,, ,,,
Evaporated Al Glass plate (t = 1mm)
1
CNB2301
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
60 60
IF -- VF
1.6 Ta = 25C
VF -- Ta
IF , IC (mA)
50
IF
50
IF = 50mA
IF (mA)
VF (V)
1.2
10mA
Forward current, collector current
40 IC
40
30
Forward current
30
Forward voltage
1mA 0.8
20
20
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
10 3 VCC = 5V Ta = 25C RL = 100 d = 1mm 10 2
IC -- VCE
160 Ta = 25C VCC = 5V IF = 2mA RL = 100 120
IC -- Ta
IC (mA)
10 2
IC (mA)
10
IF = 10mA
10
1 2mA
Relative output current
10 2
5mA
Collector current
Collector current
IC (%)
80
1
10 -1
1mA
40
10 -1
1
10
10 2
10 3
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 2 VCE = 10V 10 4
tr -- IC
VCC = 10V Ta = 25C 100
IC -- d
80
ICEO (A)
10
10 3
RL = 1k 500 100
tr (s)
Relative output current
60
Dark current
Rise time
1
10 2
40
10 -1
10
20
10 -2 - 40 - 20
0
20
40
60
80
100
1 10 -2
10 -1
1
10
0
0
Ambient temperature Ta (C )
Collector current IC (mA)
2
, ,,
d 2 4 6 8 10
VCC = 5V IF = 2mA
IC (%)
Distance d (mm)


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